报告人： Dr. Lei Lu
报告时间：2017年10月13日（周五） 下午 14:30
报告摘要：Due to higher transparency, low off-current and higher field-effect mobility, metal-oxide (MO) thin-film transistor (TFT) is hotly pursued for replacing Si-based TFT in future high-resolution displays, for example virtual reality (VR). Incorporated with the annealing-induced source/drain (S/D), a novel MO TFT, dubbed elevated-metal metal-oxide (EMMO) TFT was proposed to provide high performance metrics while retain a small device size for high-resolution displays, which could not be combined in conventional MO TFT architectures. The “defect-populated” S/D and “defect-free” channel enabled the high performance metrics: a competitive field-effect mobility of ~14 cm2/Vs; an extremely low off-current of ~10-18 A; an impressive on/off ratio of ~1012; and the superior reliability against temperature, bias and current stresses.
Dr. Lei Lu received the BS and MS in Microelectronics from Soochow University in 2007 and 2010 respectively, and then the PhD in Electronic and Computer Engineering (ECE) from Hong Kong University of Science and Technology (HKUST) in 2014. Dr. Lu was appointed as a Research Associate in the Dept. of ECE of HKUST from 2014, and then joined the HKUST Jockey Club Institute for Advanced Study (IAS) as a Postdoctoral Fellow in 2016. Currently, he is a Research Assistant Professor in the Dept. of ECE and is concurrently appointed as the IAS Junior Fellow. Dr. Lu is also with the “State Key Laboratory on Advanced Displays and Optoelectronics Technologies (SKL)” and working with Profs. Hoi-Sin Kwok and Man Wong on the various research areas, including the metal-oxide (MO) semiconductor materials, novel thin-film transistors (TFTs), advanced displays and Microelectromechanical system (MEMS) transducers. These research outputs have been published in top electronic journals, such as IEEE TED, EDL and APL and drew attention on the world’s top display, transducer and electronic device meetings, such as SID display week 16, Transducer 17 and IEDM 16.